CaltechAUTHORS
Published July 2002 | Version public
Journal Article Metadata-only

Modeling Spin-Dependent Transport in InAs/GaSb/AlSb Resonant Tunneling Structures

Creators

  • 1. ROR icon Jet Propulsion Lab
  • 2. ROR icon California Institute of Technology
  • 3. ROR icon Los Alamos National Laboratory
  • 4. ROR icon HRL Laboratories (United States)

Abstract

The Rashba effect resonant tunneling diode is a candidate for achieving spin polarizing under zero magnetic field using only conventional non-magnetic III–V semiconductor heterostructures. We point out the challenges involved based on simple arguments, and offer strategies for overcoming these difficulties. We present modeling results that demonstrate the benefits of the InAs/GaSb/AlSb-based asymmetric resonant interband tunneling diode (a-RITD) for spin filtering applications.

Additional Information

© 2002 Kluwer Academic Publishers. The authors thank D.H. Chow and T.F. Boggess for helpful discussions. This work was supported by the Defenses Advanced Research Projects Agency (DARPA) Spins in Semiconductors (SpinS) program.

Additional details

Identifiers

Eprint ID
100517
DOI
10.1023/a:1020748702245
Resolver ID
CaltechAUTHORS:20200103-162108300

Related works

Describes
10.1023/a:1020748702245 (DOI)

Funding

Defense Advanced Research Projects Agency (DARPA)

Dates

Created
2020-01-05
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Updated
2021-11-16
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