Published March 1994
| Version Published
Journal Article
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Low threshold, room temperature pulsed operation of 1.5 μm vertical-cavity surface-emitting lasers with an optimized multi-quantum well active layer
Creators
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1.
Hitachi (Japan)
Abstract
Room temperature, pulsed operation of 1.5 μm vertical-cavity surface-emitting laser is demonstrated by the optimization of an InGaAs/InGaAsP multi-quantum well active layer, especially the number of quantum wells and the barrier thickness considering matched gain effect. Low threshold currents of 17 mA in 5×7 μm^2-devices and 25 mA in 7×10 μm^2-devices were achieved.
Additional Information
© 1994 IEEE. Reprinted with permission. Manuscript received September 9, 1993.Attached Files
Published - UOMieeeptl94.pdf
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UOMieeeptl94.pdf
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- 8878
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- CaltechAUTHORS:UOMieeptl94
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2007-09-24Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field
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