Published March 2017
| Version Published
Journal Article
Open
Optical and Electronic Properties of Two-Dimensional Layered Materials
-
1.
California Institute of Technology
-
2.
Massachusetts Institute of Technology
-
3.
University of Rome Tor Vergata
-
4.
National Laboratory of Frascati
Abstract
Modern semiconductor devices have revolutionized wide-ranging technologies such as electronics, lighting, solar energy, and communication [1]. The semiconductor industry employs Si to fabricate electronic circuits, and GaAs, GaN, and other III–V materials for optoelectronics [2], with typical substrates consisting of wafers manufactured at high temperature. Precisely controlled thin films can be deposited on the substrate to achieve additional functionality, for example by chemical vapor deposition (CVD) or molecular beam epitaxy [3].
Additional Information
© 2017 M. Bernardi et al., published by De Gruyter Open. This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License. Received May 9, 2015; accepted December 1, 2015. M.B. acknowledges support by a start-up fund from the California Institute of Technology. M.P. acknowledges E.C. for the RISE Project CoExAN GA644076. J.C.G. and C.A. are grateful to the Eni Solar Frontiers Center for financial support.Attached Files
Published - _Nanophotonics__Optical_and_Electronic_Properties_of_Two-Dimensional_Layered_Materials.pdf
Files
_Nanophotonics__Optical_and_Electronic_Properties_of_Two-Dimensional_Layered_Materials.pdf
Additional details
Identifiers
- Eprint ID
- 77203
- Resolver ID
- CaltechAUTHORS:20170505-080500572
Funding
- Caltech
- European Research Council (ERC)
- CoExAN GA644076
- Eni Solar Frontiers Center
Dates
- Created
-
2017-05-05Created from EPrint's datestamp field
- Updated
-
2021-11-15Created from EPrint's last_modified field
Caltech Custom Metadata
- Caltech groups
- Physics Department