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Published December 2000 | Version Published
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A novel, aerosol-nanocrystal floating-gate device for non-volatile memory applications

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Abstract

This paper describes the fabrication, and structural and electrical characterization of a new, aerosol-nanocrystal floating-gate FET, aimed at non-volatile memory (NVM) applications. This aerosol-nanocrystal NVM device features program/erase characteristics comparable to conventional stacked gate NVM devices, excellent endurance (>l0^5 P/E cycles), and long-term non-volatility in spite of a thin bottom oxide (55-60Å). In addition, a very simple fabrication process makes this aerosol-nanocrystal NVM device a potential candidate for low cost NVM applications.

Additional Information

© 2000 IEEE. Reprinted with permission. Meeting Date: 12/10/2000 - 12/13/2000. The authors would like to thanks Dr. David Abusch-Magder, Dr. Ken Evans-Lutterodt, Dr. Marco Mastrapasqua, Dr. Mark Brongersma and Dr. Doug Bell for their helpful contributions and discussions.

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12452
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CaltechAUTHORS:DEBiedm00

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2008-12-12
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2021-11-08
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