CaltechAUTHORS
Published July 1992 | Version public
Journal Article Metadata-only

Selective nucleation of silicon clusters in CVD

Creators

  • 1. ROR icon California Institute of Technology

Abstract

A nucleation model is developed that includes chemical etching of atoms as an additional loss process besides thermal dissociation that competes with the process of atom addition in forming a cluster. The model has the proper qualitative features to describe observations of the evolution of cluster formation on amorphous silicon substrates in the low pressure CVD of a mixture of SiH₂Cl₂/HCl/H₂.

Additional Information

The authors are grateful for useful discussions with Dr. T. Yonehara.

Additional details

Identifiers

Eprint ID
119592
Resolver ID
CaltechAUTHORS:20230301-144673600.3

Dates

Created
2023-03-02
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Updated
2023-03-02
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