CaltechAUTHORS
Published May 10, 1993 | Version public
Journal Article Open

Direct determination of the ambipolar diffusion length in strained InxGa1−xAs/InP quantum wells by cathodoluminescence

Creators

  • 1. ROR icon California Institute of Technology

Abstract

The ambipolar diffusion length is measured in strained InxGa1−xAs/InP quantum wells for several mole fractions in the interval 0.3

Additional Information

© 1993 American Institute of Physics. Received 21 December 1992; accepted 15 March 1993. The authors would like to acknowledge the support of the National Science Foundation. One of us (R.B.L.) would like to acknowledge the support of a National Defense Science and Engineering Graduate Fellowship.

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10003
Resolver ID
CaltechAUTHORS:LEEapl93

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2008-04-03
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Updated
2021-11-08
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