Kinetics and moving species during Co2Si formation by rapid thermal annealing
Creators
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1.
California Institute of Technology
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2.
Lockheed Martin (United States)
Abstract
We have investigated the growth kinetics and identified the moving species during Co2Si formation by rapid thermal annealing (RTA). For the kinetics study, samples which consisted of a thin Co film on an evaporated Si substrate were used. To study which species moves, samples imbedded with two very thin Ta markers were employed. Upon RTA, only one silicide phase, Co2Si, was observed to grow before all Co was consumed. The square root of time dependence and the activation energy of about 2.1±0.2 eV were observed during the Co2Si formation up to 680 °C. The marker study indicated that Co is the dominant mobile species during Co2Si formation by RTA. We conclude that Co2Si grows by the same mechanisms during RTA and conventional thermal annealing.
Additional Information
Copyright © 1987 American Institute of Physics. Received 24 November 1986; accepted 28 January 1987. The authors thank R. Gorris and G. Mendenilla for technical assistance, and Dr. D. Jamieson and S.-J. Kim for valuable help and collaboration. Financial support by the National Science Foundation under Grant No. DMR-842119 is gratefully acknowledged. One of th authors, B.S. Lim, would like to acknowledge partial financial support from the Korean Science and Engineering Foundation.Attached Files
Published - LIMjap87.pdf
Files
LIMjap87.pdf
Additional details
Identifiers
- Eprint ID
- 13023
- Resolver ID
- CaltechAUTHORS:LIMjap87
Funding
- National Science Foundation
- DMR-842119
- Korea Science and Engineering Foundation
Dates
- Created
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2009-01-15Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field