Published May 6, 2013
| Version Published
Journal Article
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Coulomb blockade in vertical, bandgap engineered silicon nanopillars
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1.
California Institute of Technology
Abstract
Vertically oriented, bandgap engineered silicon double tunnel junction nanopillars were fabricated and electrically addressed. The devices were tested at liquid nitrogen and room temperatures. Distinctive staircase steps in current were observed at cryogenic temperatures indicative of the Coulomb blockade effect present in asymmetric double tunnel junction structures. These features disappeared when the device was measured at room temperature.
Additional Information
© 2013 American Institute of Physics. Received 5 February 2013; accepted 26 February 2013; published online 6 May 2013. This work was supported by the Advanced Energy Consortium under the BEG10-07 grant and the Boeing Corporation under the CT-BA-GTA-1 grant. The authors would like to credit the TEM image in Fig. 1(c) to A. Homyk. S.W. would like to thank both S. Harmon and T. Nelson-Walavalkar for helpful discussion. P.L. thanks the Samuel P. and Frances Krown SURF fellowship for their support. The authors would like to additionally thank the staff of the Kavli Nanoscience Institute for their continued support.Attached Files
Published - ApplPhysLett_102_183101.pdf
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ApplPhysLett_102_183101.pdf
Additional details
Identifiers
- Eprint ID
- 39725
- Resolver ID
- CaltechAUTHORS:20130802-090936601
Funding
- Advanced Energy Consortium
- BEG10-07
- Boeing Corporation
- CT-BA-GTA-1
- Samuel P. and Frances Krown SURF fellowship
Dates
- Created
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2013-08-05Created from EPrint's datestamp field
- Updated
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2021-11-09Created from EPrint's last_modified field
Caltech Custom Metadata
- Caltech groups
- Kavli Nanoscience Institute , Physics Department