Published December 19, 2001 | Version Published + Supplemental Material
Journal Article Open

Molecular-Based Electronically Switchable Tunnel Junction Devices

Abstract

Solid-state tunnel junction devices were fabricated from Langmuir Blodgett molecular monolayers of a bistable [2]catenane, a bistable [2]pseudorotaxane, and a single-station [2]rotaxane. All devices exhibited a (noncapacitive) hysteretic current−voltage response that switched the device between high- and low-conductivity states, although control devices exhibited no such response. Correlations between the structure and solution-phase dynamics of the molecular and supramolecular systems, the crystallographic domain structure of the monolayer film, and the room-temperature device performance characteristics are reported.

Additional Information

© 2001 American Chemical Society. ACS Editors' Choice - Sponsored Access by American Chemical Society. Received 12 June 2001. Published online 22 November 2001. Published in print 19 December 2001. This work was funded by the Defense Advanced Research Projects Agency, the Semiconductor Research Corporation, and the Office of Naval Research. C.P.C. is an employee of the Hewlett-Packard Corporation, and the NMR spectrometer used in this work was supported by the National Science Foundation. We thank the University of Odense for a Ph.D. Scholarship to J.O.J.

Attached Files

Published - ja0114456.pdf

Supplemental Material - ja0114456_s.pdf

Files

ja0114456.pdf

Files (1.4 MB)

Name Size
md5:8fa97ba21d67d17d547f04ca5570c930
534.2 kB Preview Download
md5:0e4b9cb273c071e10d2b584ba3954954
847.3 kB Preview Download

Additional details

Identifiers

Eprint ID
85057
Resolver ID
CaltechAUTHORS:20180302-082756149

Funding

Defense Advanced Research Projects Agency (DARPA)
Semiconductor Research Corporation
Office of Naval Research (ONR)
Hewlett-Packard Corporation
NSF

Dates

Created
2018-03-02
Created from EPrint's datestamp field
Updated
2021-11-15
Created from EPrint's last_modified field