Published September 2009 | Version Published
Book Section - Chapter Open

Data movement in flash memories

  • 1. ROR icon Texas A&M University
  • 2. ROR icon Open University of Israel
  • 3. ROR icon California Institute of Technology

Abstract

NAND flash memories are the most widely used non-volatile memories, and data movement is common in flash storage systems. We study data movement solutions that minimize the number of block erasures, which are very important for the efficiency and longevity of flash memories. To move data among n blocks with the help of Δ auxiliary blocks, where every block contains m pages, we present algorithms that use θ(n · min{m, log_Δ n}) erasures without the tool of coding. We prove this is almost the best possible for non-coding solutions by presenting a nearly matching lower bound. Optimal data movement can be achieved using coding, where only θ(n) erasures are needed. We present a coding-based algorithm, which has very low coding complexity, for optimal data movement. We further show the NP hardness of both coding-based and non-coding schemes when the objective is to optimize data movement on a per instance basis.

Additional Information

© 2009 IEEE. This work was supported in part by the NSF CAREER Award CCF-0747415, NSF grant ECCS-0802107, ISF grant 480/08, and Caltech Lee Center for Advanced Networking.

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Identifiers

Eprint ID
75295
Resolver ID
CaltechAUTHORS:20170321-173656746

Funding

NSF
CCF-0747415
NSF
ECCS-0802107
Israel Science Foundation
480/08
Caltech Lee Center for Advanced Networking

Dates

Created
2017-03-22
Created from EPrint's datestamp field
Updated
2021-11-15
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