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Published April 1980 | Version Published
Journal Article Open

Low threshold Be implanted (GaAl)As laser on semi-insulating substrate

Creators

  • 1. ROR icon California Institute of Technology

Abstract

Be implanted stripe geometry double heterostructure lasers have been fabricated on a semi-insulating GaAs substrate, with threshold currents as low as 15 mA for a cavity length of 100 μm. The laser has been monolithically integrated with a metal-semiconductor field-effect transistor.

Additional Information

© 1980 IEEE. Manuscript received December 13, 1979. This work was supported in part by the Office of Naval Research and the National Science Foundation.

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Additional details

Identifiers

Eprint ID
32658
Resolver ID
CaltechAUTHORS:20120724-080910932

Funding

Office of Naval Research (ONR)
NSF

Dates

Created
2012-07-25
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Updated
2021-11-09
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