Published May 2004
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Surface plasmon enhanced light emitting efficiencies of InGaN/GaN quantum wells
Abstract
We report a dramatic increase in the light emitting efficiency of InGaN/GaN resulting from surface plasmon interaction between the quantum wells and evaporated silver layers, whereas no such enhancement was obtained from gold deposited samples.
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© 2004 Optical Society of America.Attached Files
Published - 01361691.pdf
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01361691.pdf
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- CaltechAUTHORS:20190311-145611556
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2019-03-11Created from EPrint's datestamp field
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2019-10-03Created from EPrint's last_modified field
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