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Published November 2000 | Version Published
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Photonic crystal defect microcavities with indium arsenide quantum dots

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Abstract

The coupling of InAs QDs emission to the two dimensional photonic crystal defect cavity has been demonstrated for the first time and a narrow filtered emission linewidth could be observed. We describe the emission from 2D photonic crystals that contain an InAs QDs active layer. The epitaxial layers were grown on (001) GaAs by molecular beam epitaxy.

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© 2000 IEEE. Date of Current Version: 06 August 2002.

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28485
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CaltechAUTHORS:20111216-095820974

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2011-12-16
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2021-11-09
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