CaltechAUTHORS
Published July 17, 2015 | Version Submitted + Published
Journal Article Open

Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells

Creators

  • 1. ROR icon Delft University of Technology
  • 2. ROR icon HRL Laboratories (United States)
  • 3. ROR icon Purdue University West Lafayette
  • 4. ROR icon University of Copenhagen

Abstract

Among the theoretically predicted two-dimensional topological insulators, InAs/GaSb double quantum wells (DQWs) have a unique double-layered structure with electron and hole gases separated in two layers, which enables tuning of the band alignment via electric and magnetic fields. However, the rich trivial-topological phase diagram has yet to be experimentally explored. We present an in situ and continuous tuning between the trivial and topological insulating phases in InAs/GaSb DQWs through electrical dual gating. Furthermore, we show that an in-plane magnetic field shifts the electron and hole bands relatively to each other in momentum space, functioning as a powerful tool to discriminate between the topologically distinct states.

Additional Information

© 2015 American Physical Society. Received 18 February 2015; published 15 July 2015. We gratefully acknowledge Folkert de Vries, Rafal Skolasinski, Fabrizio Nichele, Morten Kjærgaard, and Henri Suominen for very helpful discussions. This work has been supported by funding from the Netherlands Foundation for Fundamental Research on Matter (FOM), Microsoft Corporation Station Q, and Danish National Research Foundation. S. N-P. acknowledges support of the European Community through the Marie Curie Fellowship (IOF 302937). F. Q. and A. J. A. B. contributed equally to this work.

Attached Files

Published - PhysRevLett.115.036803.pdf

Submitted - 1502.05714.pdf

Files

1502.05714.pdf

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Additional details

Identifiers

Eprint ID
63600
Resolver ID
CaltechAUTHORS:20160112-140347480

Related works

Describes
http://arxiv.org/abs/1502.05714 (URL)

Funding

Stichting voor Fundamenteel Onderzoek der Materie (FOM)
Microsoft Corporation Station Q
Danish National Research Foundation
Marie Curie Fellowship
IOF 302937

Dates

Created
2016-01-12
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Updated
2023-03-15
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