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Published July 2008 | Version Published
Journal Article Open

SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers

Creators

  • 1. ROR icon Georgia Institute of Technology
  • 2. ROR icon California Institute of Technology

Abstract

We report results on the cryogenic operation of two different monolithic X-band silicon-germanium (SiGe) heterojunction bipolar transistor low noise amplifiers (LNAs) implemented in a commercially-available 130 nm SiGe BiCMOS platform. These SiGe LNAs exhibit a dramatic reduction in noise temperature with cooling, yielding Teff of less than 21 K (0.3 dB noise figure) across X-band at a 15 K operating temperature. To the authors' knowledge, these SiGe LNAs exhibit the lowest broadband noise of any Si-based LNA reported to date.

Additional Information

© Copyright 2008 IEEE. Reprinted with permission. Manuscript received January 10, 2008; revised March 17, 2008. [Date Published in Issue: 2008-06-24] This work was supported by Research Institute Fellows Council, Georgia Institute of Technology (Georgia Tech), NASA-ETDP, JPL, and the members of the SiGe Devices and Circuits Group, Georgia Tech. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org.

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Additional details

Identifiers

Eprint ID
11343
Resolver ID
CaltechAUTHORS:THRieeemwcl08

Funding

Research Institute Fellows Council, Georgia Tech
NASA-ETDP
Jet Propulsion Laboratory
SiGe Devices and Circuits Group, Georgia Tech

Dates

Created
2008-08-06
Created from EPrint's datestamp field
Updated
2021-11-08
Created from EPrint's last_modified field

Caltech Custom Metadata

Caltech groups
Physics Department