Published April 1, 2000
| Version public
Journal Article
Open
Surface recombination measurements on III–V candidate materials for nanostructure light-emitting diodes
Creators
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1.
University of California, Los Angeles
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2.
University of Glasgow
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3.
California Institute of Technology
Abstract
Surface recombination is an important characteristic of an optoelectronic material. Although surface recombination is a limiting factor for very small devices it has not been studied intensively. We have investigated surface recombination velocity on the exposed surfaces of the AlGaN, InGaAs, and InGaAlP material systems by using absolute photoluminescence quantum efficiency measurements. Two of these three material systems have low enough surface recombination velocity to be usable in nanoscale photonic crystal light-emitting diodes.
Additional Information
©2000 American Institute of Physics. (Received 20 September 1999; accepted 18 December 1999)Files
BORjap00.pdf
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- 2702
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- CaltechAUTHORS:BORjap00
Dates
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2006-04-21Created from EPrint's datestamp field
- Updated
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2021-11-08Created from EPrint's last_modified field
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