Published September 14, 2007
| Version Published
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Comparing the low-temperature performance of megapixel NIR InGaAs and HgCdTe imager arrays
Creators
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1.
Jet Propulsion Lab
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2.
California Institute of Technology
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3.
University of Michigan–Ann Arbor
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4.
Rochester Institute of Technology
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5.
Lawrence Berkeley National Laboratory
Contributors
Abstract
We compare a more complete characterization of the low temperature performance of a nominal 1.7um cut-off wavelength 1kx1k InGaAs (lattice-matched to an InP substrate) photodiode array against similar, 2kx2k HgCdTe imagers to assess the suitability of InGaAs FPA technology for scientific imaging applications. The data we present indicate that the low temperature performance of existing InGaAs detector technology is well behaved and comparable to those obtained for state-of-the-art HgCdTe imagers for many space astronomical applications. We also discuss key differences observed between imagers in the two material systems.
Additional Information
© 2007 Society of Photo-Optical Instrumentation Engineers (SPIE). The effort described herein was carried out at the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration and funded through the Science & Technology Infrastructure program. The detector development and procurement was sponsored by the United States Department of Energy under contract No. DE-AC02-05CH11231.Attached Files
Published - 669006.pdf
Files
669006.pdf
Additional details
Identifiers
- Eprint ID
- 87225
- Resolver ID
- CaltechAUTHORS:20180619-110203529
Funding
- NASA/JPL/Caltech
- Department of Energy (DOE)
- DE-AC02-05CH11231
Dates
- Created
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2018-06-19Created from EPrint's datestamp field
- Updated
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2021-11-15Created from EPrint's last_modified field
Caltech Custom Metadata
- Series Name
- Proceedings of SPIE
- Series Volume or Issue Number
- 6690