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Published October 2, 2009 | Version Published
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Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in Bi_2Te_3 and Sb_2Te_3

Creators

  • 1. ROR icon Princeton University
  • 2. ROR icon Paul Scherrer Institute
  • 3. ROR icon University of Zurich
  • 4. ROR icon Lawrence Berkeley National Laboratory
  • 5. ROR icon Northeastern University

Abstract

We show that the strongly spin-orbit coupled materials Bi_2Te_3 and Sb_2Te_3 and their derivatives belong to the Z_2 topological-insulator class. Using a combination of first-principles theoretical calculations and photoemission spectroscopy, we directly show that Bi_2Te_3 is a large spin-orbit-induced indirect bulk band gap (δ∼150  meV) semiconductor whose surface is characterized by a single topological spin-Dirac cone. The electronic structure of self-doped Sb_2Te_3 exhibits similar Z_2 topological properties. We demonstrate that the dynamics of spin-Dirac fermions can be controlled through systematic Mn doping, making these materials classes potentially suitable for topological device applications.

Additional Information

© 2009 The American Physical Society. Received 18 June 2009. Published 28 September 2009. The use of synchrotron x rays and theoretical computations is supported by DOE/BES (No. DE-FG-02-05ER46200, No. AC03-76SF00098, and No. DE-FG02-07ER46352). Materials growth is supported by NSF (No. DMR-0819860). M. Z. H. acknowledges the A. P. Sloan Foundation.

Attached Files

Published - PhysRevLett.103.146401.pdf

Files

PhysRevLett.103.146401.pdf

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Additional details

Additional titles

Alternative title
Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in Bi2Te3 and Sb2Te3

Identifiers

Eprint ID
49029
Resolver ID
CaltechAUTHORS:20140828-154214025

Funding

Department of Energy (DOE)
DE-FG-02- 05ER46200
Department of Energy (DOE)
AC03-76SF00098
Department of Energy (DOE)
DE-FG02- 07ER46352
NSF
DMR-0819860
Alfred P. Sloan Foundation

Dates

Created
2014-08-29
Created from EPrint's datestamp field
Updated
2021-11-10
Created from EPrint's last_modified field