Published April 2, 1989 | Version public
Journal Article

Sputtering from a liquid Ga-In eutectic alloy

  • 1. ROR icon Yale University
  • 2. ROR icon Vanderbilt University
  • 3. ROR icon California Institute of Technology

Abstract

Angular distributions of Ga and In atoms sputtered from a liquid Ga-In eutectic alloy target have been measured for 3, 25, and 50 keV Ar^+ bombardment. Although the bulk composition of the alloy is 16.5 at.% In, thermodynamic surface segregation results in a surface monolayer of > 94 at.% In. A comparison of the measured sputtered-flux composition with the alloy surface composition profile indicates that the fraction of sputtered atoms originating in the first atomic layer, F_1, is ≈ 0.87 at 25 and 50 keV, and increases to 0.94 at 3 keV. Measurements of the secondary-ion flux for 25–250 keV Ar^+ bombardment indicate that F_1 is independent of projectile energy up to 250 keV, in agreement with the predictions of the collision-cascade model. The increase observed at 3 keV may be the result of a decrease in the average energy of recoil atoms participating in the collision cascades.

Additional Information

© 1989 Published by Elsevier B.V. We thank L.M. Baumel, M.G. Kaurin, A. Rice and P.D. Parker for their assistance, and D.A. Bromley for his continued interest and support. Work supported in part by US DOE Contract: DE-AC02-76ER03074 and a Cottrell Research grant from the Research Corporation. Supported in part by the NSF [DMR86-15641].

Additional details

Identifiers

Eprint ID
51106
Resolver ID
CaltechAUTHORS:20141031-091947859

Funding

Department of Energy (DOE)
DE-AC02- 76ER03074
Research Coroporation Cottrell Research grant
NSF
DMR86-15641

Dates

Created
2014-10-31
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Updated
2021-11-10
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