Published December 15, 1990
| Version Published
Journal Article
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Electronic states in a disordered metal: Magnetotransport in doped germanium
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1.
University of Chicago
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2.
Indian Institute of Science Bangalore
Abstract
We observe a sharp feature in the ultra-low-temperature magnetoconductivity of degenerately doped Ge:Sb at H∼25 kOe, which is robust up to at least three times the critical density for the insulator-metal transition. This field corresponds to a low-energy scale characteristic of the special nature of antimony donors in germanium. Its presence and sensitivity to uniaxial stress confirm the notion of metallic impurity bands in doped germanium.
Additional Information
© 1990 The American Physical Society. Received 4 June 1990. We thank H. Fritzsche for generously supplying the crystals of Ge:Sb. We are indebted to H. Krebs for his help in fabricating the stress cell. The work at The University of Chicago was supported by National Science Foundation Grant No. DMR-8816817. S.P. acknowledges support from the Materials Research Laboratory, Grant No. DMR-8819860.Attached Files
Published - PhysRevB.42.11214.pdf
Files
PhysRevB.42.11214.pdf
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Identifiers
- Eprint ID
- 47023
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- CaltechAUTHORS:20140707-163038713
Funding
- NSF
- DMR-8816817
- NSF
- DMR-8819860
Dates
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2014-07-09Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field
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