Published July 2014 | Version public
Book Section - Chapter

Polar coding for noisy write-once memories

  • 1. ROR icon California Institute of Technology
  • 2. ROR icon Texas A&M University
  • 3. ROR icon New Jersey Institute of Technology
  • 4. ROR icon University at Buffalo, State University of New York

Abstract

We consider the noisy write-once memory (WOM) model to capture the behavior of data-storage devices such as flash memories. The noisy WOM is an asymmetric channel model with non-causal state information at the encoder. We show that a nesting of non-linear polar codes achieves the corresponding Gelfand-Pinsker bound with polynomial complexity.

Additional Information

© 2014 IEEE. This work was supported in part by Intellectual Ventures, NSF grants 1218005, 1439465, 1440001, 1440014, and 1038578 and the US-Israel Binational Science Foundation (BSF) under Grant No. 2010075.

Additional details

Identifiers

Eprint ID
55320
DOI
10.1109/ISIT.2014.6875111
Resolver ID
CaltechAUTHORS:20150227-084706095

Related works

Funding

Intellectual Ventures
NSF
1218005
NSF
1439465
NSF
1440001
NSF
1440014
NSF
1038578
Binational Science Foundation (BSF)
2010075

Dates

Created
2015-03-04
Created from EPrint's datestamp field
Updated
2021-11-10
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