Published May 2003
| Version Published
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Hydrogenation of Si from SiN_x: H films: how much hydrogen is really in the Si?
Abstract
A promising method to introduce H into Si solar cells in order to passivate bulk defects is by the post-deposition annealing of an H-rich, SiN_x surface layer. It previously has been difficult to characterize the small concentration of H that is introduced by this method. IR spectroscopy has been used together with marker impurities in the Si to determine the concentration and depth of H introduced into Si from an annealed SiN_x film.
Additional Information
© 2003 IEEE. Issue Date: 18-18 May 2003; Date of Current Version: 28 June 2004. We thank Mark Rosenblum for his assistance with our experiments. Work performed at Lehigh University was supported by NREL Contract No. AAT-1-31606-04 and NSF Grant No. DMR-0108914.Attached Files
Published - STApec03.pdf
Files
STApec03.pdf
Additional details
Identifiers
- Eprint ID
- 27419
- Resolver ID
- CaltechAUTHORS:20111025-142439492
Funding
- National Renewable Energy Laboratory
- AAT-1-31606-04
- NSF
- DMR-0108914
Dates
- Created
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2011-10-25Created from EPrint's datestamp field
- Updated
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2019-10-03Created from EPrint's last_modified field