Thermally activated epitaxy of NbO
Abstract
We demonstrate a thermally activated epitaxy window for the growth of NbO at temperatures exceeding 1000 ∘C. NbO films grown in this mode display superior structural and transport properties, which are reproducible across a window of oxygen partial pressure. Through comprehensive analysis, we propose the prototypical electrical properties of NbO. This study unequivocally demonstrates the utility of high temperatures in the thin film synthesis of refractory metal compounds.
Copyright and License
©2026 American Physical Society.
Acknowledgement
We thank Bharat Jalan for his valuable comments. We acknowledge funding provided by the Gordon and Betty Moore Foundation's EPiQS Initiative (Grant No. GBMF10638), the Institute for Quantum Information and Matter, a NSF Physics Frontiers Center (NSF Grant No. PHY-2317110), and the AWS Center for Quantum Computing through a sponsored research initiative. This research was carried out at the Jet Propulsion Laboratory and the California Institute of Technology under a contract with the National Aeronautics and Space Administration and funded through the President's and Director's Research & Development Fund Program.
Data Availability
The data that support the findings of this article are openly available [47].
Supplemental Material
Supplementary information containing additional text and figures.
Files
tv12-d5vs.pdf
Additional details
Related works
- Is new version of
- Discussion Paper: arXiv:2601.16313 (arXiv)
- Is supplemented by
- Dataset: https://data.caltech.edu/records/dge85-pt174 (URL)
Funding
- Gordon and Betty Moore Foundation
- GBMF10638
- National Science Foundation
- PHY-2317110
- Jet Propulsion Laboratory
Dates
- Accepted
-
2026-01-21
Caltech Custom Metadata
- Caltech groups
- AWS Center for Quantum Computing , Institute for Quantum Information and Matter , Division of Engineering and Applied Science (EAS)
- Publication Status
- Published