CaltechAUTHORS
Published June 2007 | Version public
Journal Article Metadata-only

Epitaxial growth of aligned GaN nanowires and nanobridges

Creators

  • 1. ROR icon Yale University
  • 2. ROR icon Korea Institute of Science and Technology
  • 3. ROR icon Brown University
  • 4. ROR icon California Institute of Technology

Abstract

Homo-epitaxialy grown aligned GaN nanowires were prepared on crystalline GaN mesas. The GaN nanowires showed preferential growth along the 〈100〉 direction (m-axis direction). By using selectively positioned and crystallographically well defined GaN epitaxial lateral overgrowth (ELO) mesas as substrate, we obtained horizontally aligned GaN nanowires, in comb-like arrays and hexagonal network interconnecting the ELO mesas. Preliminary testing of the nanomechanical behavior of horizontal nanowires is reported. Combination of ELO with nanowire synthesis is expected to provide a new paradigm for nano-electronic and electromechanical devices.

Additional Information

© 2007 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. Received 21 September 2006, revised 4 January 2007, accepted 9 January 2007. Published online 25 April 2007.

Additional details

Identifiers

Eprint ID
20117
DOI
10.1002/pssb.200674843
Resolver ID
CaltechAUTHORS:20100924-080631940

Related works

Describes
10.1002/pssb.200674843 (DOI)

Dates

Created
2010-09-24
Created from EPrint's datestamp field
Updated
2021-11-08
Created from EPrint's last_modified field