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Published November 1997 | Version Published
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A study on the radiation hardness of lead tungstate crystals

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  • 1. ROR icon California Institute of Technology

Abstract

This report presents recent progress of a study on the radiation damage in lead tungstate (PbWO_4) crystals. The dose rate dependence of radiation damage in PbWO_4 has been observed, confirming our early prediction based upon a kinetic model of color centers. An optimization of the oxygen compensation through post-growth thermal annealing, carried out in Shanghai Institute of Ceramics, has led to PbWO_4 crystals with significantly improved radiation hardness. A comparison between front versus uniform irradiations revealed that the later caused a factor of 2 to 6 times more severe damage. A measurement of a preliminary batch of lanthanum doped PbWO_4 crystals indicates that the La doping seems not a determine factor for PbWO_4 radiation hardness improvement. Finally, a TEM/EDS analysis confirmed our previous conjecture that the radiation damage in PbWO_4 crystals is caused by oxygen vacancies.

Additional Information

© 1998 IEEE. Work supported in part by U.S. Department of Energy Grant No. DE-FG03-92-ER40701. We thank Prof. Z.W. Yin of SIC and Dr. G. Cheng of BGRI for providing PbWO_4 samples described in this report. Many inspiring and interesting discussions with Drs. M. Kobayashi, J.Y. Liao, G.Q. Wu and Z.W. Yin are also acknowledged. Drs. F. Nessi and P. Lecomte cross checked the light output measurement described in Section II.

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Eprint ID
91724
Resolver ID
CaltechAUTHORS:20181212-103954067

Funding

Department of Energy (DOE)
DE-FG03-92-ER40701

Dates

Created
2018-12-12
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Updated
2021-11-16
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