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Published July 11, 2016 | Version public
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Electron and Hole Dynamics in Silicon-Germanium Alloy Measured by Attosecond XUV Transient Absorption

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Abstract

Electron-hole dynamics is measured by attosecond transient absorption in silicon-germanium alloy. The germanium atoms act as reporter atoms by time-dependent probing the M_(4,5)-edge, revealing electron and hole dynamics, as well as a new midgap feature.

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© 2016 The Optical Society.

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87425
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CaltechAUTHORS:20180627-161210002

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Created
2018-06-28
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Updated
2021-11-15
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