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Published December 19, 1994 | Version public
Journal Article Open

Separately contacted electron-hole double layer in a GaAs/AlxGa1−xAs heterostructure

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Abstract

We describe a method for creating closely spaced parallel two-dimensional electron and hole gases confined in 200 Å GaAs wells separated by a 200 Å wide AlxGa1−xAs barrier. Low-temperature ohmic contacts are made to both the electrons and holes, whose densities are individually adjustable between 10^(10)/cm^2 to greater than 10^(11)/cm^2.

Additional Information

© 1994 American Institute of Physics. Received 7 April 1994; accepted 17 October 1994.

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7646
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CaltechAUTHORS:KANapl94

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2007-03-16
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