Published November 15, 2013
| Version Published
Journal Article
Open
Hybrid single quantum well InP/Si nanobeam lasers for silicon photonics
Abstract
We report on a hybrid InP/Si photonic crystal nanobeam laser emitting at 1578 nm with a low threshold power of ∼14.7 μW. Laser gain is provided from a single InAsP quantum well embedded in a 155 nm InP layer bonded on a standard silicon-on-insulator wafer. This miniaturized nanolaser, with an extremely small modal volume of 0.375(λ/n)^3, is a promising and efficient light source for silicon photonics.
Additional Information
© 2013 Optical Society of America. Received August 27, 2013; revised October 7, 2013; accepted October 7, 2013; posted October 8, 2013 (Doc. ID 196423); published November 8, 2013. W. S. F., S. K., and A. S. thank the NSF CIAN ERC (Grant EEC-0812072) and Sanofi S. A. for the financial support, as well as P. A. P. thank the Spanish MICINN (Grant FA8655-12-1-2125) for financial support.Attached Files
Published - ol-38-22-4656.pdf
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ol-38-22-4656.pdf
Additional details
Identifiers
- Eprint ID
- 43348
- Resolver ID
- CaltechAUTHORS:20140113-145946557
Funding
- NSF CIAN ERC
- EEC-0812072
- Sanofi S. A.
- Spanish MICINN
- FA8655-12-1-2125
Dates
- Created
-
2014-01-15Created from EPrint's datestamp field
- Updated
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2021-11-10Created from EPrint's last_modified field
Caltech Custom Metadata
- Caltech groups
- Physics Department