CaltechAUTHORS
Published April 1, 2013 | Version public
Journal Article Metadata-only

Synthesis and enhanced light-emission of Si nanocrystals embedded in silicon oxide nanowires

Creators

  • 1. ROR icon Kangwon National University
  • 2. ROR icon California Institute of Technology

Abstract

In this paper, we report the synthesis of silicon oxide nanowire-embedded silicon (SONW-Si) nanocrystals (NCs) and their light emission characteristics. The SONW-Si NCs were formed by thermally annealing silicon-rich oxide nanowires (NWs) grown at low temperatures. The well-defined Si NCs were found to have grown in (111) direction and clearly displayed a higher density distribution at the center of the NWs. Photoluminescence (PL) measurements of the SONW-Si NCs showed an enhanced PL intensity compared to the silicon oxide film-embedded Si NCs, which may be related to the difference between the Si diffusion characteristics of SiO_x NWs and films.

Additional Information

© 2013 Elsevier B.V. Received 1 December 2012; Accepted 12 January 2013; Available online 31 January 2013. This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant no.: 2010-0021320).

Additional details

Identifiers

Eprint ID
38661
DOI
10.1016/j.matlet.2013.01.067
Resolver ID
CaltechAUTHORS:20130523-134346493

Related works

Describes
10.1016/j.matlet.2013.01.067 (DOI)

Funding

Basic Science Research Program
NRF (Korea)
Ministry of Education, Science and Technology (MEST)
2010-0021320
NRF

Dates

Created
2013-05-31
Created from EPrint's datestamp field
Updated
2021-11-09
Created from EPrint's last_modified field