Published May 1, 2008
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Electrical characterization Of SiGe thin films
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Abstract
An apparatus for measuring electrical resistivity and Hall coefficient on both thin films and bulk material over a temperature range of 300K to 1300K has been built. A unique alumina fixture, with four molybdenum probes, allows arbitrarily shaped samples, up to 2.5 cm diameter, to be measured using van der Pauw's method. The system is fully automated and is constructed with commercially available components. Measurements of the electrical properties of doped and undoped Si-Ge thin films, grown by liquid phase epitaxy reported here, are to illustrate the capabilities of the apparatus.
Additional Information
This manuscript published as a conference proceedings: Conference Information: Modern Perspectives on Thermoelectrics and Related Materials Symposium, Location: Anaheim, CA USA Source: Modern Perspectives on Thermoelectrics and Related Materials Symposium Pages: 135-43 Published: 1991. McCormack, J. A.; Fleurial, J. P. Mater. Res. Soc. Symp. Proc. 1991, 234, 135. This work was carried out at the Jet Propulsion Laboratory/ California Institute of Technology, under contract with the National Aeronautics and Space Administration.Attached Files
Accepted Version - McCormackHallSystem.pdf
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McCormackHallSystem.pdf
Additional details
Identifiers
- Eprint ID
- 10349
- Resolver ID
- CaltechAUTHORS:jsmrssp91
Funding
- NASA
Dates
- Created
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2008-05-01Created from EPrint's datestamp field
- Updated
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2019-10-03Created from EPrint's last_modified field
Caltech Custom Metadata
- Series Name
- Materials Research Society Symposia Proceedings
- Series Volume or Issue Number
- 234