CaltechAUTHORS
Published July 2013 | Version public
Journal Article Metadata-only

Enhancement of the Thermoelectric Performance of Bi_(0.4)Sb_(1.6)Te_3 Alloys by In and Ga Doping

Creators

  • 1. ROR icon California Institute of Technology

Abstract

We report an enhancement of the thermoelectric figure of merit in polycrystalline In- and Ga-doped Bi_(0.4)Sb_(1.6)Te_3 compounds. Via the controlled doping of In or Ga, the lattice thermal conductivity was effectively reduced by strong point-defect phonon scattering while the power factor was not significantly changed due to the similarity of the density of states near the valence-band maximum between undoped and In- or Ga-doped compositions. An enhanced ZT of 1.2 at 320 K was obtained in 0.5 at.% In-doped Bi_(0.4)Sb_(1.6)Te_3 compound by these synergetic effects.

Additional Information

© 2012 TMS. Received July 6, 2012; accepted November 8, 2012; published online December 8, 2012.

Additional details

Identifiers

Eprint ID
39901
DOI
10.1007/s11664-012-2356-3
Resolver ID
CaltechAUTHORS:20130813-143553118

Dates

Created
2013-08-13
Created from EPrint's datestamp field
Updated
2021-11-09
Created from EPrint's last_modified field