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Published May 10, 2017 | Version Supplemental Material
Journal Article Open

Visible Wavelength Color Filters using Dielectric Subwavelength Gratings for Backside-illuminated CMOS Image Sensor Technologies

Creators

  • 1. ROR icon California Institute of Technology

Abstract

We report transmissive color filters based on subwavelength dielectric gratings that can replace conventional dye-based color filters used in backside-illuminated CMOS image sensor (BSI CIS) technologies. The filters are patterned in an 80-nm-thick poly-silicon film on a 115-nm-thick SiO_2 spacer layer. They are optimized for operating at the primary RGB colors, exhibit peak transmittance of 60-80%, and an almost insensitive response over a ±20° angular range. This technology enables shrinking of the pixel sizes down to near a micrometer.

Additional Information

© 2017 American Chemical Society. Received: February 14, 2017; Revised: March 30, 2017; Published: April 7, 2017. This work was supported by Samsung Electronics. Part of the device nanofabrication was developed at the Kavli Nanoscience Institute at California Institute of Technology. Y. H. was supported by a Japan Student Services Organization (JASSO) fellowship. S. M. K. was supported by the DOE Light-Material Interactions in Energy Conversion Energy Frontier Research Center funded by the US Department of Energy, Office of Science, Office of Basic Energy Sciences under Award no. DE-SC0001293. We thank H. A. Atwater and B. Fultz for providing the transmission-type microscope and the spectrometer. The authors declare no competing financial interest.

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Supplemental Material - nl7b00636_si_001.pdf

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nl7b00636_si_001.pdf

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Additional details

Identifiers

Eprint ID
76470
Resolver ID
CaltechAUTHORS:20170410-104830367

Funding

Samsung Electronics
Japan Student Services Organization (JASSO)
Department of Energy (DOE)
DE-SC0001293

Dates

Created
2017-04-10
Created from EPrint's datestamp field
Updated
2021-11-15
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Caltech groups
Kavli Nanoscience Institute