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Published 1985 | Version public
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S-Like Excited States of the 78-meV Acceptor in GaAs

Creators

  • 1. ROR icon California Institute of Technology

Contributors

Abstract

We report the first observation of s-like excited states of a double acceptor in a semiconductor. Measurements on two different liquid encapsulated Czochralski GaAs samples containing the 78-meV acceptor showed the first s-like excited state of this level to be split. We present a simple model which predicts the 1s¹2s¹ excited state of a double acceptor in GaAs to be split by 4.0 meV, in good agreement with our observed value of 2.6 meV.

Additional Information

© Springer Science+Business Media New York 1985. We would like to acknowledge the support from the Office of Naval Research under contract No. N00014-81-K-0305. The authors also gratefully acknowledge M. H. Young of Hughes Research Laboratories for providing the samples used in this study.

Additional details

Identifiers

Eprint ID
106309
Resolver ID
CaltechAUTHORS:20201027-183158985

Funding

Office of Naval Research (ONR)
N00014-81-K-0305

Dates

Created
2020-10-29
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Updated
2021-11-16
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