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Published March 2012 | Version public
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Surface-Dominated Conduction in a 6 nm thick Bi_2Se_3 Thin Film

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Abstract

We report a direct observation of surface dominated conduction in an intrinsic Bi_2Se_3 thin film with a thickness of six quintuple layers grown on lattice-matched CdS (0001) substrates by molecular beam epitaxy. Shubnikov-de Haas oscillations from the topological surface states suggest that the Fermi level falls inside the bulk band gap and is 53 ± 5 meV above the Dirac point, which is in agreement with 70 ± 20 meV obtained from scanning tunneling spectroscopies. Our results demonstrate a great potential of producing genuine topological insulator devices using Dirac Fermions of the surface states, when the film thickness is pushed to nanometer range.

Additional Information

© 2012 American Chemical Society. Received: December 1, 2011. Revised: February 1, 2012. Publication Date (Web): February 8, 2012. This work was in part supported by the Focus Center Research Program - Center on Functional Engineered Nano Architectonics (FENA) and DARPA. Y.W. acknowledges the support from the National Science Foundation of China (No.11174244).

Additional details

Identifiers

Eprint ID
31361
Resolver ID
CaltechAUTHORS:20120508-155021196

Funding

Focus Center Research Program on Functional Engineered Nano Architectonics (FENA)
Defense Advanced Research Projects Agency (DARPA)
National Science Foundation of China (NSFC)
11174244

Dates

Created
2012-05-09
Created from EPrint's datestamp field
Updated
2021-11-09
Created from EPrint's last_modified field

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Caltech groups
Physics Department