Published May 2000
| Version Published
Book Section - Chapter
Open
High performance MMICs with submillimeter wave InP-based HEMTs
Abstract
This paper presents some recently developed MMICs based on a 0.1-/spl mu/m gate-length InAlAs/InGaAs/InP HEMT process with an f/sub max/ above 600 GHz. InP-based HEMTs provide more power gain and lower noise at higher frequencies than any other transistor, including GaAs-based pHEMTs. A number of state-of-the-art InP HEMT MMICs will be presented. This includes a 150-205 GHz amplifier with 15 dB of gain, a broadband 60-140 GHz amplifier with 25 mW output power at 140 GHz, a high gain Ka-band LNA and static frequency-divider circuits operating at clock rates above 45 GHz. The high frequency performance of a next-generation 0.08-/spl mu/m-gate InAlAsSb/InAlAs/InGaAs/InP HEMT technology will also be presented.
Additional Information
© 2000 IEEE.Attached Files
Published - 00850232.pdf
Files
00850232.pdf
Additional details
Identifiers
- Eprint ID
- 88527
- Resolver ID
- CaltechAUTHORS:20180802-142536304
Dates
- Created
-
2018-08-02Created from EPrint's datestamp field
- Updated
-
2021-11-16Created from EPrint's last_modified field
Caltech Custom Metadata
- Caltech groups
- Physics Department